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www.irf.com 1 12/2/10 IRF9395MPBF irf9395mtrpbf

click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. directfet isometric description the irf9395mtrpbf combines the latest hexfet? p-channel power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of a so-8 and only 0.6 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or con vection soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfe t package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. applicable directfet outline and substrate outline (see p.7,8 for details) directfet dual p-channel power mosfet environmentaly friendly product rohs compliant containing no lead, no bromide and no halogen dual common-drain p-channel mosfets provides high level of integration and very low rds(on) sq sx st mq mx mt mp mc s g g s d d ss fig 1. typical on-resistance vs. gate voltage fig 2. typical total gate charge vs gate-to-source voltage features and benefits applications isolation switch for input power or battery application q g tot q gd q gs2 q rr q oss v gs(th) 32nc 15nc 3.2nc 62nc 23nc -1.8v v dss v gs r ds(on) r ds(on) -30v max 20v max 5.3m ? @-10v 9.0m ? @-4.5v note form quantit y irf9395mtrpbf directfet medium can ta p e and reel 4800 irf9395mtr1pbf directfet medium can ta p e and reel 1000 orderable part number package type standard pac k 2 4 6 8 10 12 14 16 18 20 -v gs, gate -to -source voltage (v) 0 4 8 12 16 20 24 t y p i c a l r d s ( o n ) ( m ? ) i d = -14a t j = 25c t j = 125c 020406080 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v vds= -6v i d = -11a absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current max. -11 -75 -110 20 -30 -14 v a
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pulse width 400s; duty cycle 2%. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.012 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 5.3 7.0 ??? 9.0 11.9 v gs(th) gate threshold voltage -1.3 -1.8 -2.4 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -6.1 ??? mv/c i dss drain-to-source leakage current ??? ??? -1.0 ??? ??? -150 i gss gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 gfs forward transconductance 40 ??? ??? s q g total gate charge ??? 64 ??? q g total gate charge ??? 32 ??? q gs1 pre- vth gate-to-source charge ??? 6.5 ??? v ds = -15v q gs2 post -vth gate-to-source charge ??? 3.2 ??? v gs = -4.5v q gd gate-to-drain charge ??? 15 ??? i d = -11a q godr gate charge overdrive ??? 7.3 ??? see fig.15 q sw switch charge (q gs2 + q gd ) ??? 18.2 ??? q oss output charge ??? 23 ??? nc r g gate resistance ??? 15 ??? ? t d(on) turn-on delay time ??? 16 ??? t r rise time ??? 142 ??? t d(off) turn-off delay time ??? 76 ??? t f fall time ??? 121 ??? c iss input capacitance ??? 3241 ??? c oss output capacitance ??? 820 ??? c rss reverse transfer capacitance ??? 466 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 43 65 ns q rr reverse recovery charge ??? 62 93 nc v ds = -24v, v gs = 0v v ds = -24v, v gs = 0v, t j = 125c mosfet symbol r g = 1.8 ? v ds = -15v, i d = -11a conditions see fig.17 ? = 1.0khz v ds = -15v, v gs = -10v, i d = -11a conditions v gs = 0v, i d = -250a reference to 25c, i d = -1.0ma v gs = -10v, i d = -14a v gs = -4.5v, i d = -11 a t j = 25c, i f = -11a, ,v dd = -15v v gs = 0v v ds = -15v i d = -11a v dd = -15v, v gs = -4.5v v ds = v gs , i d = -50a v ds = -16v, v gs = 0v v gs = -20v v gs = 20v di/dt = 260a/s t j = 25c, i s = -11a, v gs = 0v showing the integral reverse p-n junction diode. a m ? na nc ns pf a ??? ??? ??? ??? -57 -110 g d s
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fig 3. maximum effective transient thermal impedance, junction-to-ambient r is measured at t j of approximately 90c. surface mounted on 1 in. square cu board (still air). 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 10.609 0.239813 3.5414 0.007823 24.659 2.632793 21.032 18.15739 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a 4 4 r 4 r 4 absolute maximum ratin g s parameter units p d @t a = 25c power dissipation p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 60 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case , ??? 2.2 r j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor w/c 0.02 270 -40 to + 150 max. 57 2.1 1.3 w c
with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink.
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fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical on-resistance vs. drain current and gate voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = -14a v gs = -10v v gs = -4.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -5.0v -4.5v -3.5v -3.3v -3.0v -2.8v bottom -2.6v 60s pulse width tj = 25c -2.6v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.6v 60s pulse width tj = 150c vgs top -10v -5.0v -4.5v -3.5v -3.3v -3.0v -2.8v bottom -2.6v 1 2 3 4 5 -v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v ds = -15v 60s pulse width 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 25 50 75 100 125 -i d , drain current (a) 2 6 10 14 18 22 26 30 34 38 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c vgs = -4.5v vgs = -6.0v vgs = -8.0v vgs = -10v vgs = -12v
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fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig 11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -1.2a -1.9a bottom -11a 0.2 0.4 0.6 0.8 1.0 1.2 -v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100s 1ms 10ms dc 25 50 75 100 125 150 t c , case temperature (c) 0 3 6 9 12 15 - i d , d r a i n c u r r e n t ( a )
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fig 15a. gate charge test circuit fig 15b. gate charge waveform fig 16b. unclamped inductive waveforms fig 16a. unclamped inductive test circuit fig 17b. switching time waveforms fig 17a. switching time test circuit 1k vcc dut 0 l s 20k vds vgs id vgs(th) qgs1 qgs2 qgd qgodr r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as
1 0.1 %
+ - v ds 90% 10% v gs t d(on) t r t d(off) t f
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fig 18.

for n-channel hexfet power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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! code a b c d e f g h j l m p 0.023 0.028 0.007 0.089 0.156 0.024 0.018 0.024 max 0.250 0.201 0.56 0.59 0.08 2.22 3.85 0.58 0.35 0.58 min 6.25 4.80 0.60 0.70 0.17 2.26 3.95 0.62 0.45 0.62 max 6.35 5.05 0.022 0.023 0.003 0.088 0.152 0.023 0.023 0.014 min 0.189 0.246 metric imperial dimensions 0.58 0.62 1.18 1.22 0.024 0.023 0.048 0.047 n 0.03 0.08 0.001 0.003 j1 0.078 2.02 1.98 0.079 0.040 1.06 1.02 0.041 k gate marking part number logo batch number date code line above the last character of the date code indicates "lead-free"
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data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/2010

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note: for the most current drawing ple ase refer to ir website at http://www .irf.com/package/ note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf9395mtrpbf). for 1000 parts on 7" reel, order irf9395mtr1pbf reel dimensions max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 imperial min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 standard option (qty 4800) code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 tr1 option (qty 1000) max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c imperial loaded tape feed direction note: controlling dimensions in mm code a b c d e f g h imperial min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 msl3 (per jedec j-std-020d ??? ) rohs compliant qualification information ? qualification level consumer ?? (per jedec jesd47f ??? guidelines) yes moisture sensitivity level directfet qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.

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